Advanced chemical mechanical planarization (CMP) process for copper interconnects

Chemical mechanical planarization (CMP) of copper dual Damascene is described. Dishing of the copper layer can be controlled by the CMP employing non-abrasive MnO/sub 2/ slurry. Removal rate ratio of the Cu/barrier layer can be reduced from 2.8 to unity with doping of antioxide additive in the slurry. Dishing still appears at the rate of 2.8 and dishing free CMP can be attained at unit. Scratches are formed in this CMP.