Modeling and Simulation of AlPN/GaN High Electron Mobility Transistor

Abstract AlPN is a relatively new semiconductor alloy capable of providing high two‐dimensional electron gas Two‐Dimensional Electron Gas (2DEG) densities on the order of 1013 cm −2 at a heterojunction interface with GaN. The phosphorus molar fraction can be adjusted to achieve lattice‐matched AlPN/GaN heterojunctions with strong spontaneous polarization. This consequently induces more electrons at the interface, resulting in lower sheet resistance compared to an AlGaN/GaN heterojunction, making AlPN an optimal barrier in high electron mobility transistors High Electron Mobility Transistors (HEMTs). In this work, an AlPN/GaN HEMT is simulated and compared with a corresponding AlGaN/GaN HEMT. The AlPN/GaN HEMT exhibits a maximum drain current density of 1.85 A/mm, which is double that of the AlGaN/GaN HEMT, enabling this device to achieve higher power densities at high frequencies. The AlPN/GaN HEMT shows a peak transconductance of 0.293 S/mm, more than three times higher than that of the AlGaN/GaN HEMT, which can be exploited for sensor applications, as the sensitivity of the HEMT is directly proportional to the transconductance. Furthermore, the AlPN/GaN HEMT attained a lower noise figure than the AlGaN/GaN HEMT, which is crucial for low‐noise amplifier design. Therefore, it is beneficial to improve the fabrication and growth techniques of AlPN devices for stable production.