蓝宝石
半最大全宽
外延
氮化物
材料科学
薄膜
金属
相(物质)
晶体生长
渗氮
分析化学(期刊)
图层(电子)
光电子学
结晶学
纳米技术
光学
化学
冶金
激光器
有机化学
物理
作者
Xiangyu Lin,Hui Zhang,Chaoyuan Li,Xinjian Xie,Lifeng Bian,Guifeng Chen
标识
DOI:10.1016/j.jcrysgro.2023.127451
摘要
Control of the growth process is important for growing high-quality AlN films. In this work, AlN films were grown on c-plane sapphire substrates by metal nitride vapor phase epitaxy (MNVPE). Interlayer was added between the buffer layer and the formal layer, and the effect of the Ⅴ/Ⅲ ratio of the interlayer on the crystal quality, surface morphology and stress evolution of the films were analyzed. An interlayer with proper Ⅴ/Ⅲ ratio can provide a stable transition from 3D growth mode to 2D growth mode, while high Ⅴ/Ⅲ ratio induce film separation. The optimum Ⅴ/Ⅲ ratio for the interlayer was found to be 11050, and the films obtained under this parameter had a FWHM of the (0 0 2) and (1 0 2) reflections were 641 arcsec and 840 arcsec, respectively. The maximum transmission is 88%. And the film separation phenomenon was found on the samples with high V/III ratio in the second step, which was thought to be the result of growing in 3D mode for a long time.
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