Effect of methanol and photoinduced surface oxygen vacancies on the charge carrier dynamics in TiO2

The migration of holes in metal-oxide semiconductors such as TiO2 plays a vital role in (photo)catalytic applications. The dynamics of charge carriers under operation conditions can be influenced by both methanol addition and photoinduced surface oxygen vacancies (PI-SOVs). Nevertheless, the existing knowledge of the effect of methanol as a function of PI-SOVs solely concentrates on the chemical reduction process. For this reason, the fundamental understanding of the time-dependent charge carrier-vacancy interactions in the presence of methanol is impaired. Here, we conducted time-resolved atomic force microscopy measurements to quantitatively disclose the effect of methanol adsorption on the dynamics of hole migration in TiO2. Our results show that time constants associated with the migration of charge carriers significantly change due to methanol adsorption. Moreover, the energy landscape of the hole migration barrier was dominated and lowered by PI-SOVs. Our findings contribute to the physics of charge carrier dynamics by enabling the engineering of charge carrier-vacancy interactions.