Lead-Based Perovskites Significantly Suppress Dark Currents toward High-Performance Multilayer SnS2/Perovskite Photodetectors

钙钛矿(结构) 光电探测器 暗电流 材料科学 光电子学 铅(地质) 纳米技术 化学 结晶学 地貌学 地质学
作者
Fobao Huang,Chunxiao Liu,Qingyuan Yang,Yongchao Ma,Gongwei Hu,Wei Huang
出处
期刊:ACS Nano [American Chemical Society]
卷期号:19 (11): 10989-11000 被引量:26
标识
DOI:10.1021/acsnano.4c16539
摘要

Tin disulfide (SnS2), a layered material analogous to two-dimensional transition metal dichalcogenides (TMDs), demonstrates excellent photoresponse capabilities. However, the relatively large dark current in multilayer SnS2 photodetectors limits their potential in high-performance photodetection. To address this issue, we introduce lead (Pb)-based halide perovskites as dark current suppression layers for the SnS2 photodetector. Specifically, to evaluate the effects of short- and long-chain organic molecules outside the perovskite octahedral structure [PbI6]4–, three-dimensional perovskite cesium-doped formamidinium lead trihalide (FA0.9Cs0.1PbI3) and two-dimensional perovskite phenylethylammonium lead iodide ((PEA)2PbI4) were selected as dark current suppression layers, significantly suppressing the dark current while enhancing the device’s light on/off ratio and specific detectivity. Results show that, compared to the original SnS2 photodetector, the proposed device achieves a 5-order magnitude reduction in dark current (down to ∼ 10 pA level), a 150-fold increase in light on/off ratio, a 20-fold improvement in response speed, and a 4-fold enhancement in specific detectivity. Additionally, this device also exhibits notable self-powered photodetection capabilities (operating at 0 V bias). Evidently, the innovative approach of applying a thin Pb-based perovskite layer onto TMD-like materials offers a promising route to develop high-performance photodetectors with low dark current.
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