CMOS芯片
计算机科学
电子工程
集成注入逻辑
混合信号集成电路
集成电路设计
电气工程
集成电路
通流晶体管逻辑
工程类
晶体管
嵌入式系统
电压
出处
期刊:
日期:2022-02-20
卷期号:: 1-169
标识
DOI:10.1109/isscc42614.2022.11005819
摘要
Bipolar-CMOS-DMOS (BCD) technologies enable applications of high industrial interest, whereby high-voltage and highpower circuits are combined with high-density digital logic on a single die, as in (audio) power amplifiers and switch-mode power supplies (SMPS). This tutorial addresses challenges of BCD design that are not usually encountered when designing in standard CMOS, e.g. crossing (multiple) voltage domains, parasitic bipolar activity with inductive loads, large operating supply voltage ranges and electrostatic discharge (ESD). The tutorial looks into the structure of BCD technologies and devices, as well as typical circuits, such as power switches, gate drivers, level shifters and bootstraps.
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