材料科学
石墨烯
肖特基势垒
光电子学
肖特基二极管
硅
二极管
数码产品
拉曼光谱
光电二极管
当前拥挤
纳米技术
工程物理
电流(流体)
电气工程
光学
物理
工程类
作者
Muhammad Abid Anwar,Munir Ali,Srikrishna Chanakya Bodepudi,Muhammad Zeeshan Malik,Dong Pu,Xinyu Zhu,Xin Pan,Khurram Shehzad,Ali Imran,Yuda Zhao,Shurong Dong,Huan Hu,Bin Yu,Yang Xu
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2023-05-09
卷期号:34 (29): 295201-295201
标识
DOI:10.1088/1361-6528/acce41
摘要
Abstract The performance of the Graphene/Si (Gr/Si) Schottky interface and its potential in future electronics strongly rely on the quality of interconnecting contacts with external circuitry. In this work, we investigate the dominating and limiting factors of Gr/Si interfaces designed for high light absorption, paying particular attention to the nature of the contact failure under high electrostatic discharge (ESD) conditions. Our findings indicate that severe current crowding at contact edges of the graphene is the dominating factor for the device breakdown. Material degradation and electrical breakdown are systematically analyzed by atomic force, Raman, scanning electron, and energy-dispersive x-ray spectroscopies. This work enlists the robustness and limitations of Gr/Si junction in photodiode architecture under high ESD conditions that can be used as general guidelines for 2D–3D electronic and optoelectronic devices.
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