Low-Temperature Thermoelectric Performance and Optoelectronic Properties of Monolayer of WX2N4(X = Si, Ge)

We investigated the thermoelectric properties of the 2D monolayer of WX2N4 using Density Functional Theory combined with Boltzmann Transport Equation. We obtained an outstanding thermoelectric figure of merit of 0.91 at 400K for p-type WGe2N4, whether it showed a ZT value of 0.56 for n-type at the same temperature. On the other hand, the WSi2N4 showed significantly low ZT at room temperature.