材料科学
光电子学
异质结
数码产品
晶体管
计算机数据存储
神经形态工程学
纳米技术
非易失性存储器
功率(物理)
计算
范德瓦尔斯力
逆变器
储能
频道(广播)
电极
纳米电子学
耐久性
电力电子
柔性电子器件
可穿戴技术
物联网
油藏计算
光学计算
能量(信号处理)
基质(化学分析)
场效应晶体管
电压
作者
Shih‐Hsien Yang,Ko‐Chun Lee,Meng‐Yu Tsai,Yuan‐Ming Chang,Che‐Yi Lin,Feng‐Shou Yang,Kenji Watanabe,Takashi Taniguchi,Chenhsin Lien,Ching‐Hwa Ho,Mengjiao Li,Yen‐Fu Lin,Ying‐Chih Lai
出处
期刊:Nano Energy
[Elsevier BV]
日期:2019-09-11
卷期号:66: 104107-104107
被引量:37
标识
DOI:10.1016/j.nanoen.2019.104107
摘要
Multifunctional devices are expected to allow development of low-cost, highly integrated, and energy-efficient electronics for the internet of things (IoT) era. Here, we demonstrate an all-two-dimensional ReSe2/h-BN/graphene heterostructure (ReSe2 HS) consisting of a vertically coupled ReSe2 field-effect transistor and charge storage component, which possesses multifunctional characteristics for use in electronics and optoelectronics. As an electrically controlled non-volatile memory (NVM), the ReSe2 HS delivers high-performance multilevel data storage with a readout on/off current ratio exceeding 105 and excellent durability (>104 s) at an ultralow Vds of 50 mV, which benefits to the development of power saving devices. The ReSe2 HS design and high-photoresponsivity ReSe2 channel also achieve an energy efficient optical NVM with full-visible-spectrum distinction. Besides, the ReSe2 HS displays unique ambipolarity to operate as either an inverter or frequency doubler. We further propose a power-free ReSe2 HS optical memory matrix to simplify imaging systems. The ReSe2 HS shows promise for use in light-programmable information storage systems and neuromorphic computation with low power consumption.
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