Twist Angle-Dependent Atomic Reconstruction and Moiré Patterns in Transition Metal Dichalcogenide Heterostructures

范德瓦尔斯力 材料科学 堆积 异质结 凝聚态物理 扭转 六边形晶格 密度泛函理论 分子物理学 结晶学 过渡金属 物理 化学 几何学 计算化学 分子 量子力学 核磁共振 催化作用 数学 生物化学 反铁磁性
作者
Matthew R. Rosenberger,Hsun‐Jen Chuang,Madeleine Phillips,Vladimir P. Oleshko,Kathleen M. McCreary,Saujan V. Sivaram,C. Stephen Hellberg,Berend T. Jonker
出处
期刊:ACS Nano [American Chemical Society]
卷期号:14 (4): 4550-4558 被引量:281
标识
DOI:10.1021/acsnano.0c00088
摘要

Van der Waals layered materials, such as transition metal dichalcogenides (TMDs), are an exciting class of materials with weak interlayer bonding, which enables one to create so-called van der Waals heterostructures (vdWH). One promising attribute of vdWH is the ability to rotate the layers at arbitrary azimuthal angles relative to one another. Recent work has shown that control of the twist angle between layers can have a dramatic effect on TMD vdWH properties, but the twist angle has been treated solely through the use of rigid-lattice moiré patterns. No atomic reconstruction, that is, any rearrangement of atoms within the individual layers, has been reported experimentally to date. Here, we demonstrate that vdWH of MoSe2/WSe2 and MoS2/WS2 at twist angles ≤1° undergo significant atomic level reconstruction leading to discrete commensurate domains divided by narrow domain walls, rather than a smoothly varying rigid-lattice moiré pattern as has been assumed in prior experimental work. Using conductive atomic force microscopy (CAFM), we show that TMD vdWH at small twist angles exhibit large domains of constant conductivity. The domains in samples with R-type stacking are triangular, whereas the domains in samples with H-type stacking are hexagonal. Transmission electron microscopy provides additional evidence of atomic reconstruction in MoSe2/WSe2 structures and demonstrates the transition between a rigid-lattice moiré pattern for large angles and atomic reconstruction for small angles. We use density functional theory to calculate the band structures of the commensurate reconstructed domains and find that the modulation of the relative electronic band edges is consistent with the CAFM results and photoluminescence spectra. The presence of atomic reconstruction in TMD heterostructures and the observed impact on nanometer-scale electronic properties provide fundamental insight into the behavior of this important class of heterostructures.
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