烷基
有机半导体
有机场效应晶体管
材料科学
半导体
场效应晶体管
电子迁移率
真空沉积
化学工程
晶体管
化学
光电子学
有机化学
纳米技术
薄膜
工程类
电压
量子力学
物理
作者
Yuji Yamaguchi,Yuka Kojiguchi,So Kawata,Tatsuya Mori,Kazuo Okamoto,Masanori Tsutsui,Tomoyuki Koganezawa,Hiroshi Katagiri,Takuma Yasuda
标识
DOI:10.1021/acs.chemmater.0c01740
摘要
A series of dialkylated dinaphtho[2,1- b:2′,1′- f ]thieno[3,2- b ]thiophenes (S-DNTTs) featuring an S-shaped sinuous π-core substituted with different alkyl chains were developed as versatile p-type organic semiconductors. The effects of the crooked shape of the π-core and the length of the flexible alkyl chains on the solution processability, thermal durability, self-organization ability, and charge-transport functionality were systematically investigated. Because the newly developed dialkylated S-DNTTs show relatively high solubilities in organic solvents, high-performing organic field-effect transistors (OFETs) can be fabricated using both dip-coating and vacuum-deposition techniques. It was revealed that the OFET performance for dialkylated S-DNTTs was significantly affected by subtle variations in the alkyl chain length. Consequently, among this family, S-DNTT-10 with longer decyl groups achieved the highest field-effect hole mobilities of up to 11 and 3.5 cm 2 V –1 s –1 with on/off current ratios of over 10 7 in the dip-coated and vacuum-deposited OFETs, respectively. In addition, the high OFET performance of the S-DNTT-10-based system can be preserved for more than three months under ambient conditions, demonstrating its long-term stability and high durability. As revealed by two-dimensional grazing incidence X-ray diffraction analyses, a simple dip-coating method can induce unidirectional molecular orientation/assembly and thereby produce highly oriented single-crystalline domains, leading to such high hole mobilities exceeding 10 cm 2 V –1 s –1 in the dip-coated OFETs.
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