钝化
材料科学
介孔材料
硫系化合物
纳米晶材料
半导体
纳米技术
薄膜
多孔性
化学工程
光电子学
图层(电子)
复合材料
化学
催化作用
工程类
生物化学
作者
Aditya Ashok,Arya Vasanth,Tomota Nagaura,Miharu Eguchi,Nunzio Motta,Hoang-Phuong Phan,Nam-Trung Nguyen,Joseph G. Shapter,Jongbeom Na,Yusuke Yamauchi
标识
DOI:10.1002/anie.202114729
摘要
The synthesis of highly crystalline mesoporous materials is key to realizing high-performance chemical and biological sensors and optoelectronics. However, minimizing surface oxidation and enhancing the domain size without affecting the porous nanoarchitecture are daunting challenges. Herein, we report a hybrid technique that combines bottom-up electrochemical growth with top-down plasma treatment to produce mesoporous semiconductors with large crystalline domain sizes and excellent surface passivation. By passivating unsaturated bonds without incorporating any chemical or physical layers, these films show better stability and enhancement in the optoelectronic properties of mesoporous copper telluride (CuTe) with different pore diameters. These results provide exciting opportunities for the development of long-term, stable, and high-performance mesoporous semiconductor materials for future technologies.
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