Metallic networks and hydrogen compensation in highly nonstoichiometric amorphous In2O3−x

The unique response of amorphous ionic oxides to changes in oxygen stoichiometry is investigated using computationally intensive ab initio molecular dynamics simulations, comprehensive structural analysis, and hybrid density-functional calculations for the oxygen defect formation energy and electronic properties of amorphous ${\mathrm{In}}_{2}{\mathrm{O}}_{3\ensuremath{-}x}$ with $x=0$--0.185. In marked contrast to nonstoichiometric crystalline nanocomposites with clusters of metallic inclusions inside an insulating matrix, the lack of oxygen in amorphous indium oxide is distributed between a large fraction of undercoordinated In atoms, leading to an extended shallow state for $x<0.037$, a variety of weakly and strongly localized states for $0.074<x<0.148$, and a percolation-like network of single-atom chains of metallic In-In bonds for $x>0.185$. The calculated carrier concentration increases from $3.3\ifmmode\times\else\texttimes\fi{}{10}^{20}\phantom{\rule{4pt}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$ at $x=0.037$ to $6.6\ifmmode\times\else\texttimes\fi{}{10}^{20}\phantom{\rule{4pt}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$ at $x=0.074$ and decreases only slightly at lower oxygen content. At the same time, the density of deep defects located between 1 and 2.5 eV below the Fermi level increases from $0.4\ifmmode\times\else\texttimes\fi{}{10}^{21}\phantom{\rule{4pt}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$ at $x=0.074$ to $2.2\ifmmode\times\else\texttimes\fi{}{10}^{21}\phantom{\rule{4pt}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$ at $x=0.185$. The wide range of localized gap states associated with various spatial distributions and individual structural characteristics of undercoordinated In is passivated by hydrogen that helps enhance electron velocity from $7.6\ifmmode\times\else\texttimes\fi{}{10}^{4}$ to $9.7\ifmmode\times\else\texttimes\fi{}{10}^{4}$ m/s and restore optical transparency within the visible range; H doping is also expected to improve the material's stability under thermal and bias stress.