神经形态工程学
材料科学
突触
光电子学
长时程增强
电阻随机存取存储器
CMOS芯片
记忆电阻器
纳米技术
电压
神经科学
计算机科学
电气工程
化学
人工神经网络
生物化学
受体
机器学习
生物
工程类
作者
Kangmin Leng,Xu Zhu,Zhongyuan Ma,Xinyue Yu,Jun Xu,Ling Xu,Wei Li,Kunji Chen
出处
期刊:Nanomaterials
[Multidisciplinary Digital Publishing Institute]
日期:2022-01-18
卷期号:12 (3): 311-311
被引量:9
摘要
As the building block of brain-inspired computing, resistive switching memory devices have recently attracted great interest due to their biological function to mimic synapses and neurons, which displays the memory switching or threshold switching characteristic. To make it possible for the Si-based artificial neurons and synapse to be integrated with the neuromorphic chip, the tunable threshold and memory switching characteristic is highly in demand for their perfect compatibility with the mature CMOS technology. We first report artificial neurons and synapses based on the Al/a-SiN
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