Cation‐Alloying‐Induced Blue‐Shifted and Wide‐Spectrum Polarization‐Sensitive Photodetection in Quasi‐1D SbBiS3

Quasi‐1D ternary semiconductors have attracted considerable attention recently because of their additional bandgap engineering deriving from the variable stoichiometry. Herein, SbBiS 3 single crystals are successfully synthesized by chemical vapor transport (CVT) method. The basic characterizations combined with theoretical calculations reveal that SbBiS 3 semiconductor has an intrinsically low symmetry structure and in‐plane anisotropy of optical absorption. Significantly, the bandgap of SbBiS 3 shows a blue‐shifted compared to the bandgaps of binary Sb 2 S 3 and Bi 2 S 3 . Moreover, the quasi‐1D SbBiS 3 ‐based photodetector shows a wide‐spectrum photosensitivity (360–1064 nm), a fast response speed ( τ rise ≈ 10 μs and τ decay ≈ 94 μs) at 532 nm, a high photoresponsivity (6.82 A W −1 ) at 360 nm. In addition, the photodetector exhibits an anisotropic photocurrent ratio up to 1.12 at 808 nm. The work demonstrates the SbBiS 3 prepared by cationic alloy is a promising candidate for the application of polarized optoelectronics.