Lithography Technology for Sub-65nm Nodes and Beyond

193 nm immersion lithography is widely accepted as the first choice for getting to 65 nm and 45 nm nodes.Combining with double exposure,it would be even extended to 32 nm node with the cost increasing and yield decreasing.After ASML developed its first EUV demo tool in 2006,most IC manufactories believe that EUV lithography will be introduced into 32 nm and even beyond,but it still faces a lot of technical and economical challenges.For 22 nm node,E-beam direct writing is the most feasible and the least expensive,and industry will make a decision between it and EUV.