Competing Failure Mechanisms impacting Long-Term Drift of a Bandgap Voltage Reference during Operational Life Tests

Microelectronics product failure mechanisms (Hot Carrier Injection (HCI), Bias Temperature Instability (BTI) and package degradation) contributing to long-term drift in a Bandgap Voltage Reference are analyzed under High Temperature Operating Life (HTOL) and Low Temperature Operating Life (LTOL) tests and aging simulations. Results revealed that silicon degradation mechanisms (BTI and HCI) have minor impact, while degraded package-induced mechanical stress from molding compound oxidation dominates drift behavior, confirming prior findings.