Ga 2 O 3 MSM-type flexible solar-blind photodetectors based on laser induced graphene electrode

Gallium oxide (Ga 2 O 3 ), with a band gap of 4.9 eV, is a natural solar-blind detector material. Recently, Ga 2 O 3 -based solar-blind detectors with various structures have been reported and show high sensitivity, high spectral selectivity, high on/off ratio, high speed, and high stability to meet the 5S requirements. Most research on Ga 2 O 3 solar-blind detectors are based on rigid substrates. But the next generation of ideal Ga 2 O 3 photodetector should be wearable and portable. Laser-induced graphene (LIG) has the advantages of low cost, simple processing, excellent mechanical properties, and high conductivity. It is one of the ideal active materials for preparing flexible sensors. In this study, we prepared a metal-semiconductor-metal (MSM) type amorphous Ga 2 O 3 flexible solar-blind detector. Under an illumination of 254 nm light and 5 V bias, an optical detectivity as high as 6.7×10 11 Jones and a short response time of 0.8s/0.05s were obtained. The photocurrent of the device shows no obvious change when it is bent. The results show that the Ga 2 O 3 photodetector based on LIG has great potential in wearable and portable solar-blind ultraviolet optoelectronic devices.