材料科学
串联
硅
钙钛矿(结构)
光电子学
非晶硅
制作
光伏系统
晶体硅
润湿
钝化
蚀刻(微加工)
纳米技术
各向同性腐蚀
基质(水族馆)
表面粗糙度
表面光洁度
太阳能电池
能量转换效率
单晶硅
无定形固体
涂层
工程物理
量子点太阳电池
棱锥(几何)
纹理(宇宙学)
等离子太阳电池
混合太阳能电池
钙钛矿太阳能电池
作者
Shuangbiao Xia,Fei Wang,Pengxu Chen,Junlin Du,Yue Wang,Yuhui Ji,Jianliang Wang,Zhenzhu Zhao,Yunren Luo,Junjun Li,Wenjie Zhao,Jianmin Wu,Anjun Han,Jianhua Shi,Sijie Wei,Honghai Xiao,Yuelong Huang,Kexin Yao,Fanying Meng,Hanlin Hu
标识
DOI:10.1002/adfm.202525903
摘要
ABSTRACT Textured bottom silicon solar cells assume a pivotal role and manifest considerable application promise in the fabrication of high‐performance perovskite/silicon tandem solar cells (PVSK/Si TSCs). In the state‐of‐the‐art perovskite/silicon tandem solar cells manufactured using spin‐coating processes, the bottom cells typically exhibit sub‐micron pyramid (SMP) textured morphologies that create numerous V‐shaped grooves between adjacent pyramids. These characteristic structural features simultaneously impair substrate wettability and increase surface roughness, presenting a major technical barrier to achieving high‐quality perovskite film deposition. Herein, leveraging isotropic etching principles, we propose a chemical polishing strategy to smooth the V‐shaped regions of SMP textured substrates. In contrast to directly depositing perovskite films on pristine SMP surfaces, this approach enhances not only the interfacial passivation between crystalline silicon and amorphous silicon but also the surface wettability of the silicon bottom cell, consequently augmenting the bottom cell performance and facilitating closer interfacial contact between perovskite films and the pyramid structures. Furthermore, the treated SMP surface with low roughness also promotes the growth of perovskite films, mitigating pore‐induced defects, alleviating lattice strain, and consequently enhancing film uniformity and crystalline quality. Ultimately, the power conversion efficiency (PCE) of wide‐bandgap PVSK/Si TSCs fabricated on the optimized SMP textures increased significantly from 30.04% to 31.83%, accompanied by substantial enhancements in open‐circuit voltage and short‐circuit current density, alongside negligible hysteresis behavior. This study pioneers a novel approach to achieve high‐efficiency tandem photovoltaic device by emphasizing the intrinsic properties of the silicon bottom cell, thereby offering fresh perspectives for advancing PVSK/Si tandem photovoltaic development.
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