Injection dependence of spontaneous radiative recombination in c-Si: experiment, theoretical analysis, and simulation

The radiative recombination coefficient B in crystalline bulk silicon is enhanced by the Coulomb attraction between electrons and holes. This effect and hence B - is reduced at high carrier densities due to screening. We measure and numerically calculate B as a function of injection density, and with the gained model we simulate an experiment in order to extract the Coulomb-enhancement of Auger recombination.