三甲基镓
错配
钝化
材料科学
光电子学
图层(电子)
基质(水族馆)
限制
砷化镓
原子层沉积
砷化铟镓
堆栈(抽象数据类型)
纳米技术
场效应晶体管
外延
金属有机气相外延
电气工程
晶体管
电压
工程类
地质学
程序设计语言
海洋学
机械工程
计算机科学
作者
Wipakorn Jevasuwan,Tatsuro Maeda,Noriyuki Miyata,Masahiro Oda,Toshifumi Irisawa,T. Tezuka,Tetsuji Yasuda
标识
DOI:10.7567/apex.7.011201
摘要
Ga2O3 film growth on InGaAs substrates was investigated using an atomic layer deposition system with trimethylgallium (TMGa) and H2O as precursors. Self-limiting growth of Ga2O3 was confirmed on InGaAs substrates as well as on Si and GaAs. During initial formation of the Ga2O3 film on an InGaAs substrate, the selective self-cleaning effect of TMGa on AsOx and GaOx was observed. The insertion of ultrathin Ga2O3 into an Al2O3/InGaAs gate stack as an interfacial passivation layer proved quite effective to reduce Dit around the midgap. The Al2O3/InGaAs MISFET performance also revealed improvement of the effective mobility for both NH4OH- and (NH4)2S-treated devices.
科研通智能强力驱动
Strongly Powered by AbleSci AI