电子迁移率
霍尔效应
光激发
载流子密度
半导体
兴奋剂
位错
凝聚态物理
单晶
电子
化学
载流子散射
Crystal(编程语言)
散射
分析化学(期刊)
材料科学
电阻率和电导率
原子物理学
结晶学
光学
光电子学
物理
激发态
量子力学
色谱法
程序设计语言
计算机科学
作者
Takeshi Kimura,Kouhei Matsumori,K. Oto,Yoshihiko Kanemitsu,Yasuhiro Yamada
标识
DOI:10.35848/1882-0786/abf02b
摘要
Abstract Carrier mobility is one of the most fundamental material parameters of semiconductors and requisite for device applications and interpretation of physical phenomena. We determined the electron and hole mobilities of a CH 3 NH 3 PbBr 3 single crystal in the high-carrier density regime by combining AC Hall measurements under photoexcitation and two-carrier analysis. Both electron and hole mobilities were significantly enhanced by photo-doping and exceeded 300 cm 2 V −1 s −1 , which are comparable to the electron Hall mobilities of conventional inorganic semiconductors. Our experimental results indicate that charged dislocation scattering dominates the carrier transport at room temperature in the low-carrier density regime.
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