材料科学
光电子学
紫外线
有机场效应晶体管
晶体管
光激发
信号(编程语言)
场效应晶体管
激发
计算机科学
电气工程
电压
程序设计语言
工程类
作者
Zhong‐Da Zhang,Xu Gao,Ya‐Nan Zhong,Jie Liu,Linxi Zhang,Shun Wang,Jianlong Xu,Sui‐Dong Wang
标识
DOI:10.1002/aelm.201700052
摘要
Ultraviolet (UV) monitoring has wide applications in diverse fields, where sensitive photodetection and recording of UV exposure history are often simultaneously required. A new strategy is herein developed to achieve solar‐blind UV monitoring. Based on organic field‐effect transistors (OFETs), nonvolatile memories with both p‐type or n‐type organic active layers demonstrate selective and storable UV response. These OFET memories are sensitive only to solar‐blind UV light of 254 nm, and have no response to UV light of 365 nm or visible light. The photoresponsive signal can be recorded in a nonvolatile manner with excellent retention and rewritable capability, which integrates solar‐blind UV detection and memory into a single device. These OFET memories are well compatible with flexible substrates, and thus could be very useful for portable and/or wearable UV dosimetry. The conventional bandgap photoexcitation mechanism is not applicable to the this case, and a UV‐induced interfacial excitation mechanism is proposed to interpret the device features.
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