Weak localization of dilute 2D electrons in undoped GaAs heterostructures

The temperature dependence of the resistivity and magnetoresistance of dilute 2D electrons are reported. The temperature dependence of the resistivity can be qualitatively described through phonon and ionized impurity scattering. While the temperature dependence indicates no ln(T) increase in the resistance, a sharp negative magnetoresistance feature is observed at small magnetic fields. This is shown to arise from weak localization. At very low density, we believe weak localization is still present, but cannot separate it from other effects that cause magnetoresistance in the semi‐classical regime.