杰纳斯
催化作用
密度泛函理论
过渡金属
空位缺陷
材料科学
化学物理
费米能级
氢
纳米技术
化学
单层
计算化学
结晶学
物理
有机化学
量子力学
电子
作者
Dequan Er,Han Ye,Nathan C. Frey,Hemant Kumar,Jun Lou,Vivek B. Shenoy
出处
期刊:Nano Letters
[American Chemical Society]
日期:2018-05-14
卷期号:18 (6): 3943-3949
被引量:402
标识
DOI:10.1021/acs.nanolett.8b01335
摘要
Significant efforts have been made in improving the hydrogen evolution reaction (HER) catalytic activity in transition metal dichalcogenides (TMDs), which are promising nonprecious catalysts. However, previous attempts have exploited possible solutions to activate the inert basal plane, with little improvement. Among them, the most successful modification requires a careful manipulation of vacancy concentration and strain simultaneously. To fully realize the promise of TMD catalysts for HER in an easier and more effective way, a new means in tuning the HER catalytic activity is needed. Herein, we propose exploiting the inherent structural asymmetry in the recently synthesized family of Janus TMDs as a new means to stimulate HER activity. We report a density functional theory (DFT) study of various Janus TMD monolayers as HER catalysts, and identify the WSSe system as a promising candidate, where the basal plane can be activated without large applied tensile strains and in the absence of significant density of vacancies. We predict that it is possible to realize a strain-free Janus TMD-based catalyst that can readily provide promising intrinsic HER catalytic performance. The calculated density of states and electronic structures reveal that the introduction of in-gap states and a shift in the Fermi level in hydrogen adsorbed systems due to Janus asymmetry is the origin of enhanced HER activity. Our results should pave the way to design high-performance and easy-accessible TMD-based HER catalysts.
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