神经形态工程学
导电体
材料科学
电阻随机存取存储器
非易失性存储器
蛋白质丝
光电子学
纳米技术
记忆电阻器
莫特绝缘子
热传导
表征(材料科学)
电阻式触摸屏
金属-绝缘体过渡
电阻率和电导率
电致变色
莫特跃迁
计算机科学
金属
电气工程
化学
电极
电压
复合材料
工程类
机器学习
人工神经网络
计算机视觉
物理化学
冶金
作者
Shaobo Cheng,Min‐Han Lee,Xing Li,Lorenzo Fratino,Federico Tesler,Myung‐Geun Han,Javier del Valle,R. C. Dynes,Marcelo Rozenberg,Iván K. Schuller,Yimei Zhu
标识
DOI:10.1073/pnas.2013676118
摘要
Significance To perform hardware-based neuromorphic computing, novel materials exhibiting a wide variety of electronic properties are currently being explored. VO 2 is well known to exhibit an insulator-to-metal transition as well as volatile resistive switching. Many questions regarding the basic mechanism of the nonvolatile switching in this material are unanswered. In this work, the formation and relaxation of conductive filaments through nonvolatile resistive switching in VO 2 devices have been realized. The V 5 O 9 Magnéli phase conductive filament has been identified. Our results demonstrate that both resistive switching behaviors can be achieved in a single material, crucial for future technology like resistive switching memories or neuromorphic logic.
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