透射电子显微镜
材料科学
原位
衍射
分析化学(期刊)
原子扩散
相(物质)
显微镜
光谱学
结晶学
电子衍射
纳米技术
化学
光学
量子力学
物理
色谱法
有机化学
作者
A. Quintero,Patrice Gergaud,Jean‐Michel Hartmann,V. Delaye,Nicolas Bernier,David Cooper,Zineb Saghi,Vincent Reboud,Éric Cassan,Philippe Rodriguez
出处
期刊:ECS transactions
[Institute of Physics]
日期:2020-09-08
卷期号:98 (5): 365-375
被引量:9
标识
DOI:10.1149/09805.0365ecst
摘要
A comprehensive study of the impact of Sn content on the Ni/GeSn phase sequence, the morphological and electrical properties evolution during the solid-state reaction (SSR) has been performed. The phase sequence was monitored by in-situ X-ray diffraction. These results were complemented by atomic force microscopy and sheet resistance measurements together with transmission electron microscopy imaging and energy-dispersive X-ray spectroscopy applied to specimens annealed both ex-situ and in-situ. The phase formation and Sn behavior during the solid-state reaction was followed. Sn segregation around grain boundaries hampered atom diffusion, delaying the growth of the Ni(GeSn) phase. In addition, a correlation between the Sn content and the morphological and electrical properties degradation has been observed.
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