亚稳态
静水压力
电子能带结构
带隙
材料科学
相(物质)
流体静力平衡
费米能级
凝聚态物理
半导体
密度泛函理论
从头算
类型(生物学)
直接和间接带隙
结构稳定性
色散(光学)
化学
物理
热力学
计算化学
光学
结构工程
生态学
光电子学
量子力学
生物
电子
有机化学
工程类
作者
J. Wang,Feng Cheng,H. Liu,D. Li,Lanxian Shen,K. M. Shen,Shu Kang Deng
标识
DOI:10.1179/1753555715y.0000000044
摘要
Based on the ab initio density functional theory under generalised gradient approximation, we calculated the total energy and band structure for the type I and VIII Sr8Ga16Sn30 under hydrostatic pressure, the results reveal that the type VIII Sr8Ga16Sn30 is the stable phase and the type I Sr8Ga16Sn30 is the metastable phase, and there is no phase transformation between the type I and VIII Sr8Ga16Sn30 under hydrostatic pressure. The type I and VIII Sr8Ga16Sn30 are indirect semiconductors with band gaps of 0.125 and 0.009 eV respectively. With increasing pressure, the band gaps are increased, and there is no significant change for the dispersion of band near the Fermi lever. The stability of Sr8Ga16Sn30 is lower than that of Ba8Ga16Sn30; therefore, it is more difficult in the synthesis of Sr8Ga16Sn30 compared to that of Ba8Ga16Sn30.
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