压控振荡器
放大器
电气工程
晶体管
射频功率放大器
键控
电子工程
电压
工程类
CMOS芯片
作者
Xin An,Xin Yan,Helmuth P. E. Morath,Jens Wagner,Frank Ellinger
标识
DOI:10.1109/lmwc.2022.3217313
摘要
This letter presents the design and analysis of a 60-GHz voltage-controlled oscillator (VCO) based on a class-E amplifier with feedback from the drain to the gate of the transistor. This proposed VCO can produce an output signal of 8.4 dBm to meet the requirements of short-range communication and does not require an additional power amplifier (PA). The back-gate voltage of the transistor is used to modulate the oscillation frequency, achieving a frequency tuning range (FTR) from 64.1 to 66.2 GHz. The VCO consumes 38- and 0.2-mW power in the operating and standby states, respectively, and has achieved up to 22% DC-to-RF efficiency. Moreover, an on–off-keying (OOK) modulation is also integrated into this VCO that achieves up to 2.2-Gb/s throughput at 12.2-pJ/b efficiency.
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