Enhancing Interfacial Contact in Perovskite/Silicon Tandem Solar Cells Through TaO X Passivation

Abstract Perovskite/silicon tandem solar cells demonstrating tremendous potential for commercialization that position them as a transformative technology in photovoltaics. However, the poor interface contact between perovskite and C 60 has long been a critical factor limiting the power conversion efficiency (PCE) of top perovskite solar cells. Here, a multifunctional inorganic tantalum oxide (TaO X) film as a passivation layer is introduced, which not only suppresses recombination across the interface but also improves energy level alignment and enhances charge extraction at the perovskite/C 60 interface. More importantly, TaO X demonstrates exceptional thermal stability, which significantly enhances the overall stability of the device. These synergistic effects enable the fabrication of a single‐junction cell with a PCE of 21.0% at a bandgap of 1.68 eV. Furthermore, when combined with a double‐sided tunnel oxide passivated contact silicon bottom cell, a tandem cell with a PCE of 29.5% at 1 cm 2 is achieved. Furthermore, the unencapsulated TaO X ‐based devices exhibited significantly improved stability when subjected to ISOS‐L‐1 accelerated aging conditions.