Supression of shielding effect of large area field emitter cathode in radio frequency gun environment

Abstract Utilisation of large area field emitters (LAFE) cathodes for rf gun injector hold promise for delivering compact, high power and high brightness electron beam for advanced accelerator technologies. LAFEs subjected to DC electric fields posses significant challenges due to the shielding effect which restricts emission from central emitters and decreases the overall current density. Mitigating the shielding effect of LAFE in rf gun environment is essential for meeting the desired beam quality requirement in an accelerator. The current distribution of LAFE under DC conditions depend on its various geometrical parameters such as emitter height, inter-emitter distance, aspect ratio, number of emitters. Additionally, in rf gunsetup, LAFEs are subjected to variable macroscopic electric field at different emitter position which can potentially alter the current distribution compared to DC fields. In this work, we have systematically studied the shielding effect properties of LAFE in rf gun environment under the influence of various LAFE parameters. A semi-analytical approachhas been adopted to estimate the current distribution which combines the analytically calculated field enhancement factor ( γ ) and numerically calculated applied rf field values. This new methodology was first validated using COMSOL simulation and then employed for field emission performance estimation of a LAFE cathode integrated in a½ cell S-band (2856 MHz) rf gun. The simulation results reveals that under favourable conditions, a Gaussian spatial distribution of beam can be obtained from LAFE thus countering the shielding effect typical in DC fields. By optimizing the LAFE parameters, the desired current and beam distribution pattern can be achieved. This study highlights the adoption of a promising approach for designing LAFE cathodes suitable for rf gun which can lead to advancement of field emission technologies for accelerator-related applications.