神经形态工程学
仿真
记忆电阻器
瓶颈
冯·诺依曼建筑
突触
实现(概率)
计算机科学
调制(音乐)
神经科学
人工神经网络
光电子学
人工智能
计算机体系结构
物理
材料科学
电子工程
生物
工程类
数学
嵌入式系统
声学
统计
经济
经济增长
操作系统
作者
Yumo Li,Hao Sun,Langchun Yue,Fengxia Yang,Xiaofei Dong,Jianbiao Chen,Xuqiang Zhang,Jiangtao Chen,Yun Zhao,Kai Chen,Yan Li
标识
DOI:10.1021/acs.jpclett.4c01980
摘要
Developing brain-inspired neuromorphic paradigms is imperative to breaking through the von Neumann bottleneck. The emulation of synaptic functionality has motivated the exploration of optoelectronic memristive devices as high-performance artificial synapses, yet the realization of such a modulatory terminal capable of full light-modulation, especially near-infrared stimuli, remains a challenge. Here, a fully light-modulated synaptic memristor is reported on a P-MoSe2/PxOy heterostructure formed by a facile one-step selenization process. The results demonstrate successful achievement of multiwavelength (visible 470 nm to near-infrared 808 nm) modulated switching operations (reset in 0.21-0.97 V) and diverse synaptic behaviors, including postsynaptic current, paired-pulse facilitation, short- and long-term memory (STM and LTM), and learning-forgetting. Notably, the device can exhibit a 3.42 μA PSC increase under six identical 655 nm stimuli, a 11.90-46.24 μA PSC modulation by changing 808 nm light intensity from 6 to 14 mW/cm2, and a transition from STM to LTM lasting between 2.47 and 4.27 s by a prolonged 808 nm pulse from 1 to 30 s. A novel possible light-induced switching mechanism in such a heterostructure is proposed. Furthermore, brain-like light-stimulated memory behavior and Pavlov's classical conditioning demonstrate the device's capacity for processing complex inputs. The study presents a design toward a multiwavelength modulated artificial visual system for color recognition.
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