Experimental Investigation and DFT Study of Tin-Oxide for Its Application as Light Absorber Layer in Optoelectronic Devices

材料科学 带隙 摩尔吸收率 光电子学 图层(电子) 锡 电阻率和电导率 薄膜 氧化物 氧化铟锡 电子迁移率 活动层 温度系数 光学 纳米技术 复合材料 物理 电气工程 工程类 冶金 薄膜晶体管
作者
M Suresh Kumar,Syed Sadique Anwer Askari,Purnendu Shekhar Pandey,Yadvendra Singh,Rajesh Singh,Sanjeev Kumar Raghuwanshi,Gyanendra Kumar Singh,Santosh Kumar
出处
期刊:IEEE Access [Institute of Electrical and Electronics Engineers]
卷期号:11: 23347-23354 被引量:11
标识
DOI:10.1109/access.2023.3252890
摘要

Experimental investigation of SnO film has been performed to analyse the effect of oxygen ratio variation on its optical and electrical properties. The oxygen composition in SnO film has been varied and correspondingly its extinction coefficient and band gap have been obtained. Also, density functional theory (DFT) study of SnO film has been carried out in order to obtain its optical properties such as extinction coefficient and corresponding bandgap. The experimental and theoretical trends related to its optical properties are in good agreement with each other. The SnO film may be used as a prospective light absorber layer in various opto-electronic sensor devices, solar cell in particular, and its optoelectronic properties can be tuned with change in oxygen mole fraction ratio of SnO films which are detailed out in this paper. Further, some important electrical parameters of such as Hall mobility, carrier concentration and resistivity of SnO films for its different Sn and O ratios have been obtained. The investigation of tunable optical and electrical properties of SnO thin film will pave the way for a wide range of opto-electronic devices.
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