Electrically tunable magnetic fluctuations in multilayered vanadium-doped tungsten diselenide

Fluctuations are ubiquitous in magnetic materials and can cause random telegraph noise. Such noise is of potential use in systems such as spiking neuron devices, random number generators and probability bits. Here we report electrically tunable magnetic fluctuations and random telegraph noise in multilayered vanadium-doped tungsten diselenide (WSe2) using vertical tunnelling heterostructure devices composed of graphene/vanadium-doped WSe2/graphene and magnetoresistance measurements. We identify bistable magnetic states through discrete Gaussian peaks in the random telegraph noise histogram and the 1/f2 features of the noise power spectrum. Three categories of fluctuation are detected: small resistance fluctuations at high temperatures due to intralayer coupling between the magnetic domains; large resistance changes over a wide range of temperatures; and persistent large resistance changes at low temperatures due to magnetic interlayer coupling. We also show that the bistable state and cut-off frequency of the random telegraph noise can be modulated with an electric bias. Magnetic fluctuations and random telegraph noise in vertical tunnelling heterostructure devices composed of vanadium-doped tungsten diselenide sandwiched between graphene layers can be tuned using an electric bias.