材料科学
光电探测器
暗电流
光电子学
质量(理念)
认识论
哲学
作者
Junhao Zeng,Zhihua Ren,Danyan Lin,Wenbing Gong,Guang‐Ling Song,Lunbi Wu,Sha Liu,Jifa Wu,Tao Jia,Ruihao Xie,Zhicai He
标识
DOI:10.1002/adma.202509923
摘要
The limited noise-responsivity balance in Short-wave infrared (SWIR) organic photodetectors (OPDs) restricts their biomedical and optoelectronic applications. In this study, this challenge is addressed through molecular-device co-engineering by designing two fluorinated narrow-bandgap non-fullerene acceptors (BTT-DTPn and BTT-DTPn-2F) coupled with solvent vapor annealing (SVA), achieving low noise and high detectivity in SWIR OPDs. The optimized devices based on BTT-DTPn-2F, which features enhance π-π stacking due to terminal fluorination, extend its absorption capability to 1300 nm. Under -0.1 V bias, the SVA-processed BTT-DTPn-2F devices demonstrate an ultra-low dark current (Jd) of 4.93 × 10-8 A cm-2 and exhibit a suppressed trap density of states (tDOS) reduced by an order of magnitude, achieving a shot-noise limited detectivity ( Dsh∗$D_{{\mathrm{sh}}}^*$ ) of 7.19 × 1011 Jones at 1200 nm. The synergy of molecular design and post-processing enables an ultra-fast response time (1.44/1.20 µs rise/fall) and a record-high -3 dB cutoff frequency (f-3 dB) of 648 kHz, demonstrating remarkable performance for SWIR OPDs. These advancements facilitate two groundbreaking applications: deep-tissue photoplethysmography (PPG) for cuff-less blood pressure monitoring and high-speed, real-time SWIR optical communication. This methodology presents a general strategy to harmonize molecular design with device fabrication in SWIR OPDs.
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