晶闸管
材料科学
阳极
MOS控制晶闸管
门极关断晶闸管
光电子学
电压
电气工程
集成门极换流晶闸管
制作
电压降
电极
栅氧化层
工程类
晶体管
化学
病理
物理化学
医学
替代医学
作者
Siddarth G. Sundaresan,Hany Issa,Deepak Veeredy,Ranbir Singh
出处
期刊:Materials Science Forum
日期:2010-04-29
卷期号:645-648: 1021-1024
被引量:17
标识
DOI:10.4028/www.scientific.net/msf.645-648.1021
摘要
This study is focused on the design and fabrication of large-area (4.1x4.1 mm2 and 8.2x8.2 mm2), 8.1 kV 4H-SiC GTO Thyristors. The anode and gate fingers of Thyristors were designed with involute, cellular or hexagonal patterns. Forward blocking voltages as high as 8106 V and On-state voltage drop (Von) and differential specific on-resistance (Ron,sp) as low as 3.8 V and 6 mΩ-cm2 at 100 A/cm2 were measured on these devices. About 59% of 4.1 x4.1 mm2 and 29% of 8.2x8.2 mm2 Thyristors blocked voltages in excess of 6 kV. Detailed investigations revealed the impact of different anode/gate finger geometries on the device characteristics. Preliminary pulsed power characterization of the GTO Thyristors was also performed.
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