超级电容器
材料科学
纳米片
化学工程
成核
硫脲
薄膜
电极
电化学
电容
纳米技术
分析化学(期刊)
化学
有机化学
物理化学
工程类
作者
Shi Nee Lou,Melvin Choon Heng See,Sean Lim,Neeraj Sharma,Jason Scott,Dawei Wang,Rose Amal,Yun Hau Ng
出处
期刊:Chemsuschem
[Wiley]
日期:2021-05-20
卷期号:14 (14): 2882-2891
被引量:6
标识
DOI:10.1002/cssc.202100941
摘要
Abstract A direct thin film approach to fabricate large‐surface MoS 2 nanosheet thin film supercapacitors using the solution‐based diffusion of thiourea into an anodized MoO 3 thin film was investigated. A dense MoS 2 nanosheet thin film electrode (D‐MoS 2 ) was obtained when the anodized MoO 3 thin film was processed in a low thiourea solution concentration, whereas a highly porous MoS 2 nanosheet thin film electrode (P‐MoS 2 ) was formed at a higher thiourea solution concentration. The charge storage performances of the D‐MoS 2 and P‐MoS 2 thin films displayed an unusual increase in capacitance on extended cycling, leading to a capacitance as high as around 5–8 mF cm −2 . X‐ray diffraction and cross‐sectional microscopy revealed the capacitance enhancements of the MoS 2 supercapacitors are attributable to the nucleation of a new MoS 2‐ x O x phase upon cycling. For the D‐MoS 2 nanosheet thin film, the formation and growth of the MoS 2‐ x O x phase during cycling was accompanied by a volumetric expansion of the MoS 2 layer. For the P‐MoS 2 thin film, the nucleation and growth of the MoS 2‐ x O x phase occurred in the pores of the MoS 2 layer. The propagation of the MoS 2‐ x O x phase also shifted the charge storage process in both films from a diffusion‐limited process to a capacitive‐dominant process.
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