Retention Analysis of a Non-Volatile Ferroelectric Memory Device

In this paper we present a data retention analysis of a non-volatile ferroelectric memory device. A ferroelectric capacitance coupled with a sense capacitance in a Sawyer tower is used as the memory component of the device. The cumulative direction of all the dipoles in the ferroelectric capacitance material corresponds to its memory. The positive and negative remnant polarization charge states of the capacitor when an electric field is applied to it are denoted as either data ‘0’ or data ‘1’[1 Macleod, T. and Ho, F. D. 2003. Design of a ferroelectric programmable logic gate array. Integrated Ferroelectrics, 56: 1013–1021. [Taylor & Francis Online], [Web of Science ®] , [Google Scholar]]. In addition to retention the voltage and current characteristics of the circuit were measured. Measurements of the ferroelectric capacitor's polarization taken at different delay time intervals are also presented.