PMOS逻辑
NMOS逻辑
锡
材料科学
金属浇口
光电子学
铝
逻辑门
基质(水族馆)
电气工程
电子工程
栅氧化层
晶体管
电压
冶金
工程类
地质学
海洋学
作者
Sree Kesapragada,Rongjun Wang,Dave Liu,Guojun Liu,Zhigang Xie,Zhong Ge,Hui Yang,Yu Lei,X. Lu,Xianmin Tang,Jianxin Lei,M.D. Allen,Srinivas Gandikota,Kevin Moraes,Steven Hung,N. Yoshida,Chorng‐Ping Chang
标识
DOI:10.1109/asmc.2010.5551460
摘要
In this work, representative high-k/metal gate MOS-capacitor stacks were fabricated in both gate first and replacement gate integration schemes. Aluminum- and lanthanum- based cap layers (both widely accepted as Vt tuning cap layers in the industry), in addition to TiN metal gate, can tune the effective workfunction towards PMOS and NMOS, respectively. Varying Ti:N stoichiometry in TiN can induce >250 mV change in TiN workfunction. 1 volt separation between NMOS and PMOS was achieved by screening various workfunction materials in replacement gate scheme. Substrate modification during the growth of aluminum was key to achieving void-free aluminum gap fill in narrow gate trenches.
科研通智能强力驱动
Strongly Powered by AbleSci AI