Thermal management of graphene-induced high-power semiconductor laser package with bidirectional conduction structure

A graphene-based film acted as thermal dissipation channel is introduced to design the package of high-power single-emitter laser diodes. Here we show that heat conduction of high-power laser diodes can be greatly improved via introduction of additional transverse heat dissipation channel with graphene-based film through thermal management. The finite element analysis method is employed to analyse the heat dissipation performance of laser diodes. The epi-up package coupled with graphene is proposed to reduce the thermal stress of laser diodes. In order to increase the thermal dissipation while reducing thermal stress, the effect of the temperature of the active region on account of the thickness of graphene-based film of the package of high-power single-emitter laser diodes is discussed, and the relationship between the output power of semiconductor laser and the heat dissipation effect of graphene-based film is analyzed. The results show that the junction temperature of the active region of graphene-induced package structure is reduced by 9.1 K and the thermal resistance is reduced by 1.52 K/W by using bidirectional conduction graphene-based film compared with the non-graphene-based structure.