Germanium Photodetectors with >100 GHz Bandwidth and >1.1 A/W Responsivity on 200-mm Silicon Photonics Platform

We demonstrate Ge photodetector with high-quality Ge growth in silicon recess and optimized lateral P-i-N diode, enabling uniform wafer-scale performance of >100 GHz bandwidth, >1.1 A/W responsivity, and <25 nA dark current at -2 V.