Interface and Surface Chemistry Engineering in HgTe Quantum Dots for High‐Performance Infrared Optoelectronic Devices

Colloidal quantum dots composed of mercury telluride (HgTe) have emerged as promising materials for infrared detection systems, imaging applications, focal plane array technologies, and various other optoelectronic platforms. These nanomaterials exhibit a distinctive bandgap that can be controlled through particle size manipulation, covering wavelengths from the near-infrared through terahertz regions, and demonstrate robust charge carrier transport characteristics that position them favorably for advanced infrared technological applications. This review consolidates current developments in HgTe CQD fabrication methods, their electronic band structures, and integration strategies for functional devices. The nanoscale dimensions of HgTe induce quantum confinement phenomena that enable precise bandgap engineering, transitioning from negative to positive energy gaps and facilitating tunable light absorption and emission across an extensive wavelength spectrum. We analyze how variations in nanoparticle dimensions, morphology, and surface functionalization impact their optical behavior and electrical transport characteristics. Additionally, we explore the implementation of HgTe CQDs in photodetection platforms, field-effect transistor configurations, and imaging array architectures, emphasizing design strategies, operational characteristics, and durability limitations. This comprehensive survey seeks to advance understanding of HgTe CQD systems and facilitate their continued evolution toward commercially viable, cost-effective, and high-efficiency infrared optoelectronic solutions.