双极扩散
材料科学
掺杂剂
兴奋剂
纳米晶
极性(国际关系)
偶极子
光电子学
离子
半导体
纳米技术
化学物理
量子点
费米能级
扩散
热传导
离子注入
凝聚态物理
表面光电压
作者
Hwichan Cho,Hyo-In Kim,Mee-Ree Kim,Mahnmin Choi,Hyunwoo Jo,Da In Kim,Byeong-Jae Kang,Seunghwan Roh,Hyun-Jung Kim,Ji-Sang PARK,So-Hee Jeong,Moon Sung Kang
标识
DOI:10.1002/adma.202514750
摘要
Abstract The precise control of semiconductor polarity in nanocrystals (NCs) is crucial for optimizing device performance in various optoelectronic applications. In this study, it is shown that Ag⁺, added post‐synthetically to InAs NCs using an AgNO 3 solution, can induce either n ‐type or p ‐type doping of the solid, depending on the intrinsic polarity of the host and the dopant concentration. In n ‐type InAs NCs, Ag⁺ consistently acts as an interstitial n ‐type dopant, shifting the conduction band minimum closer to the Fermi level. Conversely, in p ‐type InAs NCs (innately doped with Zn during synthesis), Ag⁺ initially exhibits a p ‐type doping effect at low concentrations by forming surface dipoles but transitions to an n ‐type doping effect at higher concentrations through interstitial incorporation. These results offer a unified understanding of the intricate and adjustable doping behavior of Ag⁺ in colloidal NC systems and present new opportunities for post‐synthetic polarity engineering in III–V nanomaterials.
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