荧光粉
材料科学
近红外光谱
波长
光电子学
量子效率
半最大全宽
发光二极管
发光
二极管
热稳定性
发射强度
分析化学(期刊)
光学
物理
化学
量子力学
色谱法
作者
Mengdi Xu,Zhongyuan Li,Qiqi Li,Tinglin Mou,Xuesong Wang,Dong Yan,Ye Li,Xianju Zhou,Zhen Fang,Lixin Ning
标识
DOI:10.1002/adom.202303144
摘要
Abstract Broadband near‐infrared (NIR) emissions in the long wavelength region with simultaneous high efficiency and thermal stability are desirable for NIR phosphor‐converted light‐emitting diodes (NIR pc‐LEDs) light sources. Herein, a novel broadband NIR‐emitting phosphor is reported, Ba 5 La 3 MgAl 3 O 15 :Cr 3+ (BLMAO:Cr 3+ ), which exhibits a NIR emission band spanning 700–1300 nm with maximum peak wavelength ( λ max ) at 925 nm and full width at half maximum of 160 nm. The optimized phosphor achieves an internal quantum efficiency of 66%, and the integrated emission intensity at 423 K remains 61% of that at room temperature, which surpasses most Cr 3+ ‐activated phosphors emitting in the long‐wavelength NIR region ( λ max > 900 nm). The NIR luminescence properties are elucidated on the basis of density functional calculations of the multiple Cr 3+ local structures as generated by the Ba/La occupation disorder in the host material. The applications of the NIR phosphor in pc‐LED devices are demonstrated, showing potential in night‐vision and nondestructive examination. The results indicate that BLMAO:Cr 3+ is a promising phosphor with highly efficient and thermally stable broadband NIR emission for NIR LED light sources.
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