碳化硅
材料科学
硅
直线(几何图形)
光电子学
纳米技术
光学
复合材料
几何学
物理
数学
作者
Jared E. Payne,Joseph Eddy,Hunter Stevenson,Gregory N. Nielson,Stephen M. Schultz
出处
期刊:Metrology
[MDPI AG]
日期:2025-02-02
卷期号:5 (1): 9-9
标识
DOI:10.3390/metrology5010009
摘要
Advances in silicon carbide fabrication techniques enable the fabrication of high aspect ratio non-line-of-sight structures. The further development of non-line-of-sight fabrication tools and the use of the non-line-of-sight structures requires a set of measurement techniques. The goals of the measurement techniques are to (1) quickly detect the success of the fabrication and determine when a failure occurs, (2) accurately measure the shape of the subsurface structure, and (3) accurately characterize the structure. The first goal is attained using subsurface optical microscopy and single point confocal microscopy with a demonstrated resolution of 3 μm. The second goal is attained using X-ray computer tomography with a resolution of 500 nm. The third goal requires the accuracy of scanning electron microscopy. The substructures are brought to the surface through focused ion beam milling if the structures are less than 30 μm deep and through ablation cleaving and polishing for deeper substructures.
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