Wake-up free La-doped ZrO2 antiferroelectric capacitors

Abstract This study experimentally investigated La-doped ZrO 2 (ZLO) antiferroelectric (AFE) capacitors. Significant polarization enhancement is demonstrated in ZLO antiferroelectric capacitors with the optimized La concentration. The ZLO antiferroelectric capacitors reveal superior performance even under a low-temperature process (< 400℃). Remarkably, without the post-metallization annealing (PMA), ZLO devices still possess excellent antiferroelectric properties, which is highly advantageous for back-end-of-line (BEOL) process. Further endurance testing shows that ZLO antiferroelectric devices could withstand the wake-up effect during cycling process, showcasing unexceptionable endurance (>10 10 cycles). The results in this study opens new avenues for practical antiferroelectric applications and brings promise for their integration into advanced integrated circuits.