Insights into the effect of Ni doping on In2S3 for enhanced activity and selectivity of photocatalytic CO2 reduction

The limited photocatalytic CO2 reduction performance mainly lies in the low utilization of photogenerated electrons during the reaction. In this work, we developed the defect level within the Ni-doped In2S3 nanotube photocatalysts via a simple solvothermal method to increase the available amount of photogenerated electrons for enhanced photocatalytic CO2 reduction performance than the pristine In2S3. The introduction of Ni element into the lattice of In2S3 could significantly improve the photocatalytic activity and selectivity without destruction of the nanotube structure of In2S3. The yield of CO reaches 243.2 μmol/g/h under visible light, which is the highest reported value among In2S3 photocatalysts, and is 8.2 times more than the pure In2S3. Moreover, by modulating the doping amount of Ni element, the selectivity of CO varied from 27.7% to 51.0%. Further characterizations suggest that the doping of Ni element altered the electronic bandgap arrangement of In2S3, where the position of the conduction band is conducive to the activation of CO2 molecules. Moreover, the defect level resulting from Ni-doping not only facilitates the separation of photoexcited electron-hole pairs but also suppresses the recombination of electrons and holes. This study provides an available and reliable strategy for enhancing the photocatalytic CO2 reduction performance of related sulfide photocatalytic materials in future studies.