Strain effects on electronic and dynamical properties of half-Heusler semiconductors: insights from Meta-GGA

Abstract In this study, we investigated the effects of mechanical strain, including both tensile and compressive strains, on the electronic properties and dynamical stability of two ternary half-Heusler compounds: TiIrSb and ZrIrSb. We employed the plan wave pseudo-potential method (PW-PP) within the density functional theory (DFT) framework. Our calculations were performed using both the GGA-PBE and Meta-GGA-SCAN approximations. Furthermore, to compute the phonon dispersion, we employed the R2SCAN functional instead of SCAN for both compounds, addressing numerical challenges encountered with the latter. In the absence of strain, our calculations revealed that both compounds exhibit semiconducting behavior, featuring an indirect band gap at identical locations in the Brillouin Zone. Notably, the SCAN functional consistently predicted a larger band gap compared to the corresponding values obtained with PBE for both compounds. Specifically, the band gap expanded significantly, creating a noticeable separation between the valence and conduction bands. For TiIrSb, it increased from 0.84 eV with PBE to 1.05 eV with SCAN, while for ZrIrSb, it increased from 1.41 eV with PBE to 1.71 eV with SCAN. Under the application of strains, both compounds demonstrated an increased band gap under compressive strain, while the application of tensile strain led to a decrease in the band gap, resulting in an indirect-to-direct band gap transition for ZrIrSb. Remarkably, under all strain values, whether tensile or compressive, the SCAN functional consistently exhibited a larger band gap compared to PBE, indicating its accurate description of the material’s electronic structure. The calculated Density of States (DOS) and Partial Density of States (PDOS) reveal that the valence band extremum (VBM) primarily consisted of Ti/Zr-d orbitals, while the conduction band maxima (CBM) predominantly involved strong hybridization between Ti/Zr-d, Ir-d, and Sb-p states. Notably, the SCAN functional predicted higher orbital contributions to Total Density of States (TDOS) compared to the PBE approximation. Importantly, both half-Heusler materials exhibited mechanical and dynamical stability under various strain conditions.