逆变器
三元运算
CMOS芯片
计算机科学
晶体管
逻辑门
电压
电子工程
电气工程
算法
工程类
程序设计语言
作者
Jaemin Son,Kyoungah Cho,Sangsig Kim
标识
DOI:10.1038/s41598-022-17035-z
摘要
Abstract In this study, we present a fully complementary metal–oxide–semiconductor-compatible ternary inverter with a memory function using silicon feedback field-effect transistors (FBFETs). FBFETs operate with a positive feedback loop by carrier accumulation in their channels, which allows to achieve excellent memory characteristics with extremely low subthreshold swings. This hybrid operation of the switching and memory functions enables FBFETs to implement memory operation in a conventional CMOS logic scheme. The inverter comprising p- and n-channel FBFETs in series can be in ternary logic states and retain these states during the hold operation owing to the switching and memory functions of FBFETs. It exhibits a high voltage gain of approximately 73 V/V, logic holding time of 150 s, and reliable endurance of approximately 10 5 . This ternary inverter with memory function demonstrates possibilities for a new computing paradigm in multivalued logic applications.
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