降级(电信)
介电谱
材料科学
图层(电子)
电阻抗
光电子学
化学工程
分析化学(期刊)
复合材料
计算机科学
电气工程
化学
环境化学
电极
电信
电化学
工程类
物理化学
作者
Nan Ji,Yupei Zhang,Yepeng Xiang,Yu Zhang,Long Chen,Bong‐Geum Lee
摘要
Abstract Understanding the degradation mechanisms of the charge generation layer (CGL) is crucial for developing stable tandem organic light‐emitting diodes (OLEDs). Using capacitance‐voltage (C‐V) measurements and modulus spectroscopy, we visualized the charge distribution within the CGL and analyzed its changes before and after aging. Results indicate that the degradation of the CGL is primarily driven by dopant diffusion, which induces impurity compensation at the interface and increases the driving voltage. Equivalent circuit fitting further quantified the changes in resistance and capacitance across layers, confirming the impact of dopant diffusion on CGL performance. Additionally, the role of spontaneous orientation polarization (SOP) in CGL stability was explored, suggesting its potential influence on the interface barrier height. These findings provide insights for optimizing the CGL design to enhance the long‐term stability of tandem OLEDs.
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